+0.1 2.4-0.1
High hFE and high current. Low VCE(sat). +0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current(dc) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ID PT Tj Tstg Rating 16 16 5 500 200 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta.
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SMD Type
NPN Silicon Epitaxia 2SD2230
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
High hFE and high current. Low VCE(sat).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.
2SD2230 Datasheet