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2SD2099 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Contains input resistance (R1), base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj T.

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Datasheet Details

Part number 2SD2099
Manufacturer Guangdong Kexin Industrial
File Size 80.96 KB
Description NPN Epitaxial Planar Silicon Transistor
Datasheet download datasheet 2SD2099 Datasheet

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www.DataSheet4U.com SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD2099 Features Contains input resistance (R1), base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 30 6 3 5 1.