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HM07DP10D - P-Channel Enhancement Mode Field Effect Transistor

General Description

Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so

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HM07DP10D P-Channel Enhancement Mode Field Effect Transistor ')1;/ Product Summary ● VDS ● ID ● RDS(ON)( at VGS= -4.5V) ● RDS(ON)( at VGS= -V) ● RDS(ON)( at VGS= -1.