HM09P12D - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM09P12D
Manufacturer	H&M Semiconductor
File Size	429.08 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM09P12D Datasheet
Additional preview pages of the HM09P12D datasheet.

HM09P12D Product details

Description

The HM09P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

VDS = -12V,ID = -9A RDS(ON) < 35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.5V.
Advanced trench MOSFET process technology.
Ultra low on-resistance with low gate charge.

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Published: Jun 21, 2025 |