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HM09P12D Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: P-Channel Enhancement Mode Power MOSFET.

General Description

The HM09P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

General

Key Features

  • VDS = -12V,ID = -9A RDS(ON) < 35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.5V.
  • Advanced trench MOSFET process technology.
  • Ultra low on-resistance with low gate charge.

HM09P12D Distributor & Price

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