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HM120N03KA Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

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Datasheet Details

Part number	HM120N03KA
Manufacturer	H&M Semiconductor
File Size	724.06 KB
Description	N-Channel Enhancement Mode Power MOSFET
Download	HM120N03KA Download (PDF)

General Description

The HM120N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

HM120N03KA N-Channel Enhancement Mode Power MOSFET.

Key Features

VDS =30V,ID =120A RDS(ON) =3.2mΩ (Typ) @ VGS=10V RDS(ON) =4.6mΩ (Typ) @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram HM120N03KA.

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