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HM12N65F - 650V N-Channel MOSFET

Product Overview

H&M Semiconductor

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HM12N65F 650V N-Channel MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM12N65F

Datasheet Details

Part number	HM12N65F
Manufacturer	H&M Semiconductor
File Size	364.78 KB
Description	650V N-Channel MOSFET
Datasheet	HM12N65F Datasheet
Note	This datasheet PDF includes multiple part numbers: HM12N65F, HM12N65. Please refer to the document for exact specifications by model.
Additional preview pages of the HM12N65F datasheet.

Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

12.0A, 650V, RDS(on) = 0.75Ω @VGS = 10 V.
Low gate charge ( typical 52nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS G.

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Published: Jul 1, 2025 |