Datasheet4U Logo Datasheet4U.com

HM12N65F - 650V N-Channel MOSFET

This page provides the datasheet information for the HM12N65F, a member of the HM12N65 650V N-Channel MOSFET family.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 12.0A, 650V, RDS(on) = 0.75Ω @VGS = 10 V.
  • Low gate charge ( typical 52nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS G.

📥 Download Datasheet

Datasheet preview – HM12N65F

Datasheet Details

Part number HM12N65F
Manufacturer H&M Semiconductor
File Size 364.78 KB
Description 650V N-Channel MOSFET
Datasheet download datasheet HM12N65F Datasheet
Additional preview pages of the HM12N65F datasheet.

📁 Similar Datasheet

  • HM12N60 - N-Channel 650V Power MOSFET (VBsemi)
  • HM12 - Output Toroidal Inductors (Bi technologies)
  • HM1-6504883 - 4096 x 1 CMOS RAM (Intersil Corporation)
  • HM1-6504B883 - 4096 x 1 CMOS RAM (Intersil Corporation)
  • HM1-6508883 - 1024 x 1 CMOS RAM (Intersil Corporation)
  • HM1-6508B883 - 1024 x 1 CMOS RAM (Intersil Corporation)
  • HM1-6514-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM1-6514B-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM1-6514S-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM1-6516-9 - 2K x 8 CMOS RAM (Intersil Corporation)
Other Datasheets by H&M Semiconductor
  • HM12N65 - 650V N-Channel MOSFET
  • HM12N60 - 600V N-Channel MOSFET
  • HM12N60F - 600V N-Channel MOSFET
  • HM12N02D - N-Channel Enhancement Mode Power MOSFET
  • HM12N20D - N-Channel Enhancement Mode Power MOSFET
  • HM120N03K - N-Channel Enhancement Mode Power MOSFET
  • HM120N03KA - N-Channel Enhancement Mode Power MOSFET
  • HM120N04 - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM12N65 / HM12N65F HM12N65 / HM12N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 12.0A, 650V, RDS(on) = 0.
Published: |