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HM30SDN02D - 20V Half Bridge Dual N-Channel Super Trench Power MOSFET

General Description

switching performance.

RDS(ON) and Qg.

Key Features

  • Q1 "High Side" MOSFET Q2 "Low Side" MOSFET.
  • VDS =20V,ID =30A VDS =20V,ID =30A RDS(ON).

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Full PDF Text Transcription for HM30SDN02D (Reference)

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HM30SDN02D 20V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The HM30SDN02D uses Super Trench technology that is uniquely optimized to provide the most...

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Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOSFETs in a dual Power DFN5x6 package. General Features Q1 "High Side" MOSFET Q2 "Low Side" MOSFET ● VDS =20V,ID =30A VDS =20V,ID =30A RDS(ON) <8mΩ @ VGS=10V RDS(ON) <8mΩ @ VGS=10V RDS(ON)<8.5mΩ @ VGS=4.5V RDS(ON) <8.5mΩ @ VGS=4.

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