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HM35SDN03D - 30V Half Bridge Dual N-Channel Super Trench Power MOSFET

General Description

switching performance.

RDS(ON) and Qg.

Key Features

  • Q1 "High Side" MOSFET.
  • VDS =30V,ID =35A RDS(ON).

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Full PDF Text Transcription for HM35SDN03D (Reference)

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HM35SDN03D 30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The HM35SDN03D uses Super Trench technology that is uniquely optimized to provide the most...

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Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOSFETs in a dual Power DFN5x6 package. General Features Q1 "High Side" MOSFET ● VDS =30V,ID =35A RDS(ON) <7mΩ @ VGS=10V Q2 "Low Side" MOSFET VDS =30V,ID =35A RDS(ON) <7mΩ @ VGS=10V RDS(ON)<12mΩ @ VGS=4.5V RDS(ON) <12mΩ @ VGS=4.

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