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HM3P10MR Datasheet -100v P-channel Enhancement Mode MOSFET

Manufacturer: H&M Semiconductor

Overview: HM3P10MR -100V P-Channel Enhancement Mode MOSFET.

General Description

The HM3P10MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = -100V ID =-3.0 A RDS(ON) < 210mΩ @ VGS=10V.

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