Datasheet4U Logo Datasheet4U.com

HM3P10MR - -100V P-Channel Enhancement Mode MOSFET

Description

The HM3P10MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -100V ID =-3.0 A RDS(ON) < 210mΩ @ VGS=10V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM3-6514-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-6514B-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-6514S-9 1024 x 4 CMOS RAM Intersil Corporation
HM3-65764 High Speed CMOS SRAM Matra Design Semiconductor
HM3-65787 High Speed CMOS SRAM Matra Design Semiconductor

Other Datasheets by H&M Semiconductor

Part Number Description
HM3018 N-Channel Enhancement Mode Power MOSFET
HM3018JR N-Channel Enhancement Mode Power MOSFET
HM3018KR N-Channel Enhancement Mode Power MOSFET
HM3018SR N-Channel Enhancement Mode Power MOSFET
HM30DN02D N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM3P10MR -100V P-Channel Enhancement Mode MOSFET Description The HM3P10MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-3.
Published: |