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HM65P03D - P-Channel Enhancement Mode Power MOSFET

General Description

The HM65P03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-30V,ID =-65A RDS(ON) = 2.8mΩ (Typ) @ VGS=-10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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HM65P03D P-Channel Enhancement Mode Power MOSFET Description The HM65P03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-65A RDS(ON) = 2.