HMS260N10D Datasheet N-channel Super Trench Ii Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMS260N10, HMS260N10D N-Channel Super Trench II Power MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	HMS260N10D
Manufacturer	H&M Semiconductor
File Size	760.03 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS260N10D HMS260N10 Datasheet (PDF)

General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Key Features

VDS =100V,ID =260A RDS(ON)=2.3mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.3mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS260N10 HMS260N10 TO-220 HMS260N10D HMS260N10D TO-263 Reel Size - Tape width -.

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