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HMS29N65D Datasheet N-channel Super Junction Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMS29N65/HMS29N65D/HMS29N65F N-Channel Super Junction Power MOSFET Ⅲ.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Key Features

  • Optimized body diode reverse recovery performance.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS RDS(ON)TYP ID 650 V 96 mΩ 2 A.

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