HMS60N06D - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS60N06D
Manufacturer	H&M Semiconductor
File Size	464.20 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS60N06D Datasheet
Additional preview pages of the HMS60N06D datasheet.

The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

VDS =60V,ID =60A RDS(ON)=4.4mΩ (typical) @ VGS=10V RDS(ON)=6.4mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram Marking and pin assignment.

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Published: Jul 15, 2025 |