HMS65N03Q Datasheet N-channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMS65N03Q N-Channel Super Trench Power MOSFET.

Datasheet Details

Part number	HMS65N03Q
Manufacturer	H&M Semiconductor
File Size	691.82 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS65N03Q-HMSemiconductor.pdf

General Description

The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Key Features

VDS =30V,ID =65A RDS(ON)=1.65mΩ (typical) @ VGS=10V RDS(ON)=2.45mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking HMS65N03Q Device HMS65N03Q Device Package DFN3.3X3.3-8L Reel Size - Tape width - Quantity - Absolute M.

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