HMS60N06Q - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS60N06Q
Manufacturer	H&M Semiconductor
File Size	612.79 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS60N06Q Datasheet
Additional preview pages of the HMS60N06Q datasheet.

The HMS14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

VDS =60V,ID =0A RDS(ON)=4.4mΩ (typical) @ VGS=10V RDS(ON)=6.4mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS14 HMS14 DFN3.3X3.3-8L Reel Size - Tape width - Quantity - Absolute.

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Published: Jul 1, 2025 |