HM2309F Description
The HM2309F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.
HM2309F Key Features
- VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Load switch
- PWM application