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HM2309F

Manufacturer: H&M Semiconductor

HM2309F datasheet by H&M Semiconductor.

HM2309F datasheet preview

HM2309F Datasheet Details

Part number HM2309F
Datasheet HM2309F-HMSemiconductor.pdf
File Size 548.58 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM2309F page 2 HM2309F page 3

HM2309F Overview

The HM2309F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

HM2309F Key Features

  • VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation
  • Load switch
  • PWM application

HM2309 from other manufacturers

View HM2309 datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo HM2309 P-Channel 60V MOSFET VBsemi
H&M Semiconductor logo - Manufacturer

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HM2309F Distributor

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