• Part: HM2309F
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 548.58 KB
Download HM2309F Datasheet PDF
H&M Semiconductor
HM2309F
Description The HM2309F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features - VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Application - Load switch - PWM application Schematic diagram HM2309F Marking and pin Assignment SOT-23-3L top view Package Marking and Ordering Information Device Marking HM2309F Device HM2309F Device Package SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -60...