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HM2309F Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM2309F P-Channel Enhancement Mode Power MOSFET.

General Description

The HM2309F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

General

Key Features

  • VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

HM2309F Distributor