• Part: HFP60N06
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: HUASHAN ELECTRONIC
  • Size: 753.24 KB
Download HFP60N06 Datasheet PDF
HFP60N06 page 2
Page 2
HFP60N06 page 3
Page 3

Datasheet Summary

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor - Applications - Servo motor control. - Power MOSFET gate drivers. - DC/DC converters - Other switching applications. - Features - 60A, 60V(See Note), RDS(on) <11.5mVΩ@VGS = 10 V - Fast switching - 100% avalanche tested - Minimize input capacitance and gate charge - Exceptional dv/dt capability TO-220 1- G 2-D 3-S - Maximum Ratings(Ta=25℃ unless otherwise specified) Tstg- - Storage Temperature ------------------------------------------------------ -55~165℃ Tj - - Operating Junction Temperature -------------------------------------------------- 150℃ VDSS - - Drain-Source Voltage...