• Part: HYG170C03LR1S
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.40 MB
Download HYG170C03LR1S Datasheet PDF
HUAYI
HYG170C03LR1S
HYG170C03LR1S is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature N- Channel Vds = 30V - Channel Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ (Vgs= 10V) 21.6 mΩ (Vgs= -10V) 19.3 mΩ (Vgs= 4.5V) 40.0 mΩ (Vgs= -4.5V) - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Applications - Synchronous Rectifiers - Wireless Power - H-bridge Motor Drive 30V plementary MOSFET Pin Description SOP8L Ordering and Marking Information G170C03 XYMXXXXXX N-Channel P-Channel Package Code S: SOP8L Date Code XYMXXXXXX Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.0 Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IDM ID PD RJA EAS Parameter mon Ratings (Tc=25°C Unless Otherwise...