Datasheet Details
Part number
HYG170N03LR1C2
Manufacturer
HUAYI
File Size
3.21 MB
Description
N-Channel Enhancement Mode MOSFET
Datasheet
Full PDF Text Transcription for HYG170N03LR1C2 (Reference)
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HYG170N03LR1C2 . For precise diagrams, and layout, please refer to the original PDF.
HYG170N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature 30V/24A RDS(ON)= 14.5 mΩ(typ.) @VGS = 10V RDS(ON)= 21.5 mΩ(typ.) @VGS = 4.5V 100% Avalanche Tested R...
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S = 10V RDS(ON)= 21.5 mΩ(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS PDFN8L(5x6) Applications Load Switch Battery Protection Ordering and Marking Information Single N-Channel MOSFET C2 G170N03 XYMXXXXXX Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free
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HYG170N03LR1C2 Datasheet
