HYG170ND03LA1C1 datasheet by HUAYI.
| Part number | HYG170ND03LA1C1 |
|---|---|
| Datasheet | HYG170ND03LA1C1-HOOYI.pdf |
| File Size | 837.62 KB |
| Manufacturer | HUAYI |
| Description | Dual N-Channel Enhancement Mode MOSFET |
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DFN3 3-8L Date Code XYWXXXXXX Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully pliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not...
| Part Number | Description |
|---|---|
| HYG170ND03LA1S | Dual N-Channel Enhancement Mode MOSFET |
| HYG170ND03LR1S | Dual N-Channel MOSFET |
| HYG170N03LR1C2 | N-Channel Enhancement Mode MOSFET |
| HYG170C03LR1S | N-Channel Enhancement Mode MOSFET |
| HYG110N03LR1S | N-Channel Enhancement Mode MOSFET |
| HYG110N11LS1C2 | N-Channel Enhancement Mode MOSFET |
| HYG110P04LQ1C2 | Single P-Channel Enhancement Mode MOSFET |
| HYG110P04LQ1D | P-Channel MOSFET |
| HYG110P04LQ1U | P-Channel MOSFET |
| HYG110P04LQ1V | P-Channel MOSFET |
