Datasheet Details
Part number
HYG170ND03LA1C1
Manufacturer
HUAYI
File Size
837.62 KB
Description
Dual N-Channel Enhancement Mode MOSFET
Datasheet
Full PDF Text Transcription for HYG170ND03LA1C1 (Reference)
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HYG170ND03LA1C1 . For precise diagrams, and layout, please refer to the original PDF.
HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET Feature 30V/24A RDS(ON)= 15.6 mΩ(typ) @VGS = 10V RDS(ON)= 20.5 mΩ(typ) @VGS = 4.5V 100% Avalanche Tested Reli...
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= 10V RDS(ON)= 20.5 mΩ(typ) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) Pin Description D2 D2 D1 D1 D1 D1 D2 D2 D1 D2 Pin1 S2 G2 S1 G1 G1 S1 G2 S2 DFN3*3-8L Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information C1 G170ND03 XYWXXXXXX Dual N-Channel MOSFET Package Code C1: DFN3*3-8L Date Code XYWXXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.
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HYG170ND03LA1C1 Datasheet
