HYG170ND03LA1C1
HYG170ND03LA1C1 is Dual N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature
- 30V/24A RDS(ON)= 15.6 mΩ(typ) @VGS = 10V RDS(ON)= 20.5 mΩ(typ) @VGS = 4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen Free and Green Devices Available
(Ro HS pliant)
Pin Description
D2 D2 D1 D1
D1 D1 D2 D2
D1
D2
Pin1
S2 G2 S1 G1
G1 S1 G2 S2
DFN3- 3-8L
Applications
- Switching Application
- Power Management for DC/DC
- Battery Protection
Ordering and Marking Information
C1
G170ND03
XYWXXXXXX
Dual N-Channel MOSFET
Package Code C1: DFN3- 3-8L Date Code XYWXXXXXX
Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
.hymexa.
V1.0
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Junction Temperature Range
TSTG
Storage Temperature...