• Part: HYG170ND03LA1C1
  • Description: Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 837.62 KB
Download HYG170ND03LA1C1 Datasheet PDF
HUAYI
HYG170ND03LA1C1
HYG170ND03LA1C1 is Dual N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - 30V/24A RDS(ON)= 15.6 mΩ(typ) @VGS = 10V RDS(ON)= 20.5 mΩ(typ) @VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description D2 D2 D1 D1 D1 D1 D2 D2 D1 D2 Pin1 S2 G2 S1 G1 G1 S1 G2 S2 DFN3- 3-8L Applications - Switching Application - Power Management for DC/DC - Battery Protection Ordering and Marking Information C1 G170ND03 XYWXXXXXX Dual N-Channel MOSFET Package Code C1: DFN3- 3-8L Date Code XYWXXXXXX Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature Range TSTG Storage Temperature...