• Part: HYG170ND03LA1S
  • Description: Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 859.00 KB
Download HYG170ND03LA1S Datasheet PDF
HUAYI
HYG170ND03LA1S
HYG170ND03LA1S is Dual N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - 30V/9A RDS(ON)= 14.5 mΩ(typ.)@VGS = 10V RDS(ON)= 19.7 mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description SOP8L Applications - Switching Application - Power Management for DC/DC - Battery Protection Ordering and Marking Information G170ND03L XXXYWXXXXX Dual N-Channel MOSFET Package Code S: SOP8L Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature Range TSTG Storage Temperature Range Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Pulsed Drain Current - ID Continuous Drain...