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HSC3953 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSC3953, a member of the HSC3953_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

High definition CRT display video output, wide-band amplifier.

Features

  • High fT: 500MHz.
  • High Breakdown Voltage: BVCEO=120Vmin.
  • Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF TO-126ML Absolute Maximum Ratings (TA=25°C).
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.3 W Total Power Dissipation (TC=25°C).

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Datasheet preview – HSC3953

Datasheet Details

Part number HSC3953
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.42 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSC3953 Datasheet
Additional preview pages of the HSC3953 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/4 Description High definition CRT display video output, wide-band amplifier. Features • High fT: 500MHz • High Breakdown Voltage: BVCEO=120Vmin • Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF TO-126ML Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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