HSC3953S Datasheet PDF - Hi-Sincerity Mocroelectronics NPN EPITAXIAL PLANAR TRANSISTOR Specs

HSC3953S - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSC3953S, a member of the HSC3953S_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

High-definition CRT display video output, wide-band amplifier applications.

Features

High fT: 500MHz.
High breakdown voltage: VCEO=120V min.
Small reverse transfer capacitance TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

Datasheet Details

Part number	HSC3953S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	46.22 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSC3953S Datasheet
Additional preview pages of the HSC3953S datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSC3953S NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2005.02.15 Page No. : 1/4 Description High-definition CRT display video output, wide-band amplifier applications. Features • High fT: 500MHz • High breakdown voltage: VCEO=120V min • Small reverse transfer capacitance TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .............

Published: Mar 26, 2005 |