HSC3953S - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HSC3953S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	46.22 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSC3953S Datasheet
Note	This datasheet PDF includes multiple part numbers: HSC3953S, HSC3953S_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HSC3953S datasheet.

High-definition CRT display video output, wide-band amplifier applications.

High fT: 500MHz.
High breakdown voltage: VCEO=120V min.
Small reverse transfer capacitance TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📁 Similar Datasheet

HSC300 - Aluminium Housed Power Resistors (TE)
HSC3000 - Sealed rechargeable Ni-MH cylindrical cell (JYH Battery)
HSC100 - Aluminium Housed Power Resistors (TE)
HSC106D - Silicon Controlled Rectifier (SemiHow)
HSC106M - Silicon Controlled Rectifier (SemiHow)
HSC119 - Silicon Epitaxial Planar Diode for High Speed Switching (Hitachi Semiconductor)
HSC150 - Aluminium Housed Power Resistors (TE)
HSC200 - Aluminium Housed Power Resistors (TE)

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |