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HSD667A - Silicon NPN Transistor

Download the HSD667A datasheet PDF. This datasheet also covers the HSD667A_Hi variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Low Frequency Power Amplifier Complementary Pair With HSB647A.

Spec.

No.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Po

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSD667A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSD667A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.90 KB
Description Silicon NPN Transistor
Datasheet download datasheet HSD667A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. Spec. No. : HE6510-B Issued Date : 1996.07.15 Revised Date : 2000.10.01 Page No. : 1/4 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ..................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................