2SK3001 Description
2SK3001 GaAs HEMT Low Noise Amplifier.
2SK3001 Key Features
- Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)
- High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz)
- Small package. (CMPAK-4)
- Part: 2SK3001
- Manufacturer: Hitachi Semiconductor
- Size: 145.04 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 2SK3000 | Silicon N-Channel MOSFET |
| 2SK3069 | N-Channel MOSFET |
| 2SK3070 | N-Channel MOSFET |
| 2SK3070L | N-Channel MOSFET |
| 2SK3070S | N-Channel MOSFET |