2SK3001 Datasheet | Hitachi Semiconductor

Features - Excellent low noise characteristics. Fmin = 0.8 d B typ. (3 V, 5 m A, 0.9 GHz) - High associated gain. Ga = 18 d B typ. (3 V, 5 m A, 0.9 GHz) - Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is remended to adopt appropriate cautions when handling this transistor. CAUTION This product use Ga As. Since dust or fume of Ga As is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Air. And it should never be thrown out with general industrial or domestic wastes. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel dissipation .. Symbol VDSS VGSO VGDO ID Pch Tch Tstg Ratings 6 - 4 - 4 20 100 125 - 55 to +125 Unit V V V m A m W °C °C Channel temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Gate to source leak current Symbol I GSS Min - - 0.5 35 Typ - - 50 Max - 20 - 1.5 70 Unit µA V m A Test Conditions VGS = - 4 V, VDS = 0 VDS = 3V, ID = 100 µA VDS = 3 V, VGS = 0 Pulse test Forward transfer admittance |yfs| PG 40 60 - m S VDS = 3 V, ID =10 m A f = 1 k Hz Power Gain 15.0 18.0 - d B VDS = 3 V, ID = 5 m A f = 0.9 GHz Noise Figure NF - 0.8 1.2 d B Gate to source cutoff voltage VGS(off) Drain to source current I DSS Associated gain Ga - 21.0 - d B VDS = 3 V, ID = 5 m A f = 0.8 Ghz, Zs =Zsopt Minimum noise figure Fmin - 0.7 - d B Associated gain Ga -...