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2SK3001 Datasheet Gaas Hemt Low Noise Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st.

Key Features

  • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz).
  • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz).
  • Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor.

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