Part BB301C
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 46.17 KB
Hitachi Semiconductor
BB301C

Overview

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
  • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK-4 2 3 4 1
  • Source
  • Gate1
  • Gate2
  • Drain BB301C