BB301C - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Datasheet Summary

Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz).
Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain BB301C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipa.

Hitachi

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Datasheet Details

Part number	BB301C
Manufacturer	Hitachi
File Size	46.17 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB301C Datasheet
Additional preview pages of the BB301C datasheet.

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BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4.

Published: Jun 3, 2005 |