Hitachi BB301C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
| Part No. | BB301C |
|---|---|
| Datasheet | BB301C Download |
| Manufacturer |  Hitachi |
| Description | Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
| Buy | Stock & Price |
FEATURES
● Build in Biasing Circuit; To reduce using parts cost & PC board space.● Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
● Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain BB301C
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 100 150 –55 to +150 Unit V V V mA mW °C °C 2 BB301CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 ±6 — — 0.4 0.4 10 15 Typ — — — — — — — 15 20 Max — — — +100 ±100 1.0 1.0 20 — Unit V V V nA nA V V mA mS Test conditions I D = 200 µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS =...
