Part BB304M
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 68.49 KB
Hitachi Semiconductor
BB304M

Overview

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain; (PG = 29 dB typ. at f = 200 MHz)
  • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz)
  • Wide supply voltage range; Applicable with 5V to 9V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4
  • Source
  • Gate1
  • Gate2
  • Drain Note:
  • Marking is “DW-”.