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BB304M

Manufacturer: Hitachi Semiconductor (now Renesas)

BB304M datasheet by Hitachi Semiconductor (now Renesas).

BB304M datasheet preview

BB304M Datasheet Details

Part number	BB304M
Datasheet	BB304M_HitachiSemiconductor.pdf
File Size	68.49 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB304M Overview

BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C (Z) 4th.

BB304M Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space
High gain; (PG = 29 dB typ. at f = 200 MHz)
Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz)
Wide supply voltage range; Applicable with 5V to 9V supply voltage
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold p

BB304 from other manufacturers

View BB304 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	BB304	Silicon Epitaxial Planar Dual Capacitance Diodes	Telefunken
	BB304A	Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes)	Siemens Group

More Datasheets from Hitachi Semiconductor (now Renesas)

View all Hitachi Semiconductor (now Renesas) datasheets

Part Number	Description
BB304C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB302C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB302M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB305C	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB305M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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