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BB304M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain; (PG = 29 dB typ. at f = 200 MHz).
  • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz).
  • Wide supply voltage range; Applicable with 5V to 9V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
BB304C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C (Z) 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is “DW–”. 2. BB304M is individual type number of HITACHI BBFET.