Part BB304C
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 67.89 KB
Hitachi Semiconductor
BB304C

Overview

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain; (PG = 29 dB typ. at f = 200 MHz)
  • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz)
  • Wide supply voltage range; Applicable with 5V to 9V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4
  • Source
  • Gate1
  • Gate2
  • Drain Notes: 1 Marking is “DW-”.