BB301M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Datasheet Summary

Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB301M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Cha.

Hitachi

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Datasheet Details

Part number	BB301M
Manufacturer	Hitachi
File Size	46.12 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB301M Datasheet
Additional preview pages of the BB301M datasheet.

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BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.

Published: Jun 3, 2005 |