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BB301M

Manufacturer: Hitachi Semiconductor (now Renesas)

BB301M datasheet by Hitachi Semiconductor (now Renesas).

BB301M datasheet preview

BB301M Datasheet Details

Part number	BB301M
Datasheet	BB301M_HitachiSemiconductor.pdf
File Size	46.12 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301M Overview

BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st.

BB301M Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space
Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions

More Datasheets from Hitachi Semiconductor (now Renesas)

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Part Number	Description
BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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