Part BB305C
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 66.68 KB
Hitachi Semiconductor
BB305C

Overview

  • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4
  • Source
  • Gate1
  • Gate2
  • Drain Note:
  • Marking is “EW-”.
  • BB305C is individual type number of HITACHI BBFET. BB305C