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BB305C

Manufacturer: Hitachi Semiconductor (now Renesas)

BB305C datasheet by Hitachi Semiconductor (now Renesas).

BB305C datasheet preview

BB305C Datasheet Details

Part number	BB305C
Datasheet	BB305C_HitachiSemiconductor.pdf
File Size	66.68 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305C Overview

BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C (Z) 4th.

BB305C Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High g
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions
Provide mini mold packages; CMPAK-4 (SOT-343mod)

More Datasheets from Hitachi Semiconductor (now Renesas)

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Part Number	Description
BB305M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB302C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB302M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB304C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB304M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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