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BB305C - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.

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Datasheet preview – BB305C

Datasheet Details

Part number BB305C
Manufacturer Hitachi
File Size 66.68 KB
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet download datasheet BB305C Datasheet
Additional preview pages of the BB305C datasheet.

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Full PDF Text Transcription

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BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C (Z) 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is “EW–”. 2. BB305C is individual type number of HITACHI BBFET.
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