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BB305M

Manufacturer: Hitachi Semiconductor (now Renesas)

BB305M datasheet by Hitachi Semiconductor (now Renesas).

BB305M datasheet preview

BB305M Datasheet Details

Part number	BB305M
Datasheet	BB305M_HitachiSemiconductor.pdf
File Size	69.60 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305M Overview

BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607C (Z) 4th.

BB305M Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High g
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions
Provide mini mold packages; MPAK-4(SOT-143mod)

More Datasheets from Hitachi Semiconductor (now Renesas)

View all Hitachi Semiconductor (now Renesas) datasheets

Part Number	Description
BB305C	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB302C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB302M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB304C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB304M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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