Part BB305M
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 69.60 KB
Hitachi Semiconductor
BB305M

Overview

  • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5V to 9V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4
  • Source
  • Gate1
  • Gate2
  • Drain Note:
  • Marking is “EW-”.
  • BB305M is individual type number of HITACHI BBFET. BB305M