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BB305M Datasheet Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

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BB305M build in biasing circuit mos fet ic uhf/vhf rf amplifier by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	BB305M
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	69.60 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Download	BB305M Download (PDF)

Overview

BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607C (Z) 4th.

Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5V to 9V supply voltage.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain N.

More Datasheets from Hitachi Semiconductor (now Renesas)

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