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BB305M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5V to 9V supply voltage.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain N.

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Datasheet Details

Part number BB305M
Manufacturer Hitachi
File Size 69.60 KB
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet download datasheet BB305M Datasheet
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Full PDF Text Transcription

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BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607C (Z) 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is “EW–”. 2. BB305M is individual type number of HITACHI BBFET.
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