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BB302C

Manufacturer: Hitachi Semiconductor (now Renesas)

BB302C datasheet by Hitachi Semiconductor (now Renesas).

BB302C datasheet preview

BB302C Datasheet Details

Part number	BB302C
Datasheet	BB302C_HitachiSemiconductor.pdf
File Size	58.22 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302C Overview

BB302C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-573 A (Z) 2nd.

BB302C Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space
Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions
Provide mini mold packages; CMPAK-4(SOT-343mod)
Note 1 Marking is “BW-”
Note 2 BB302C is individual type number of HITACHI BBFET

More Datasheets from Hitachi Semiconductor (now Renesas)

View all Hitachi Semiconductor (now Renesas) datasheets

Part Number	Description
BB302M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB304C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB304M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB305C	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB305M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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