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BB302C - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain.
  • Note 1 Marking is “BW.
  • ”.
  • Note 2 BB302C is individual type number of.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
BB302M Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BB302C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-573 A (Z) 2nd. Edition September 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW–”. • Note 2 BB302C is individual type number of HITACHI BBFET.