Part BB302C
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 58.22 KB
Hitachi Semiconductor
BB302C

Overview

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4
  • Source
  • Gate1
  • Gate2
  • Drain
  • Note 1 Marking is “BW-”.
  • Note 2 BB302C is individual type number of HITACHI BBFET. BB302C