BB302M - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Datasheet Summary

Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain.
Note 1 Marking is “BW.
”.
Note 2 BB302M is individual type number of.

Hitachi

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Datasheet Details

Part number	BB302M
Manufacturer	Hitachi
File Size	61.89 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB302M Datasheet
Additional preview pages of the BB302M datasheet.

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BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd. Edition September 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW–”. • Note 2 BB302M is individual type number of HITACHI BBFET.

Published: Jun 3, 2005 |