BB302M Description
BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd.
BB302M Key Features
- Build in Biasing Circuit; To reduce using parts cost & PC board space
- Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions
- Provide mini mold packages; MPAK-4(SOT-143mod)
- Note 1 Marking is “BW-”
- Note 2 BB302M is individual type number of HITACHI BBFET