Hitachi BB302M
BB302M is individual type number of HITACHI BBFET.| Part No. | BB302M |
|---|---|
| Datasheet | BB302M Download |
| Manufacturer |  Hitachi |
| Description | Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
| Buy | Stock & Price |
FEATURES
● Build in Biasing Circuit; To reduce using parts cost & PC board space.● Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
● Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
● Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain
● Note 1 Marking is “BW–”.
● Note 2 BB302M
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature ±10 25 150 150 –55 to +150 V mA mW °C °C Unit V VELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(of...
