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BB302M

Manufacturer: Hitachi Semiconductor (now Renesas)

BB302M datasheet by Hitachi Semiconductor (now Renesas).

BB302M datasheet preview

BB302M Datasheet Details

Part number	BB302M
Datasheet	BB302M_HitachiSemiconductor.pdf
File Size	61.89 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302M Overview

BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd.

BB302M Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space
Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions
Provide mini mold packages; MPAK-4(SOT-143mod)
Note 1 Marking is “BW-”
Note 2 BB302M is individual type number of HITACHI BBFET

More Datasheets from Hitachi Semiconductor (now Renesas)

View all Hitachi Semiconductor (now Renesas) datasheets

Part Number	Description
BB302C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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BB301	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB301M	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB304C	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
BB304M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB305C	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB305M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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