• Part: BB302M
  • Description: Build in Biasing Circuit MOS FET IC UHF RF Amplifier
  • Manufacturer: Hitachi Semiconductor
  • Size: 61.89 KB
Download BB302M Datasheet PDF
Hitachi Semiconductor
BB302M
BB302M is Build in Biasing Circuit MOS FET IC UHF RF Amplifier manufactured by Hitachi Semiconductor.
Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd. Edition September 1997 Features - Build in Biasing Circuit; To reduce using parts cost & PC board space. - Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) - Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. - Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain - Note 1 Marking is “BW- ”. - Note 2 BB302M is individual type number of HITACHI...