1SS88
1SS88 is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Low capacitance. (C = 0.97 p F max)
- High reliability with glass seal.
Ordering Information
Type No. 1SS88 Cathode band White Mark H Package Code DO-35
Outline
1 Cathode band
1. Cathode 2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Peak forward current Average forward current Power dissipation Junction temperature Storage temperature Symbol VR IFM IO Pd Tj Tstg Value 10 35 15 150 100
- 55 to +100 Unit V m A m A m W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current IR1 IR2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability
- 1
Min 365 520 30
Typ
Max 430 600 0.2 10 0.97 0.1 10 10
Unit m V µA p F p F m V
Test Condition IF = 1 m A IF = 10 m A VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 2.5 m A IF = 10 m A C = 200 p F, R = 0 Ω, Both forward and reverse direction 1 pulse.
C ∆C ∆VF1 ∆VF2
Notes: 1. Failure criterion ; IR > 50 µA at VR = 10 V 2. Each group shall unify a multiple of 4 diodes
Rev.1, Oct. 2000, page 2 of 5
Main Characteristic
-1
-5
Forward current IF (A)
-2
-3
Reverse current IR...
