2SH31
2SH31 is N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- High speed switching
- Low on-voltage
Outline
TO- 3P
1. Gate 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25° C Symbol VCES VGES IC ic(peak) PC Tj Tstg
Note1
Ratings 600 ±20 75 150 150 150
- 55 to +150
Unit V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Zero gate voltage collector current Gate to emitter leak current I GES 6.0 2.1 4100 400 600 300 800 ±1 8.0 2.6 600 1600 µA V V p F ns ns ns ns VGE = ± 20 V, VCE = 0 I C = 75m A, VCE = 10V I C = 75A, VGE = 15V VCE = 10V, VGE = 0 f = 1MHz I C = 75A RL = 4 Ω VGS = ±15V Rg = 50 Ω Symbol I CES Min Typ Max 100 Unit µA Test Conditions VCE = 600V, VGE = 0
Gate to emitter cutoff voltage VGE(off) Collector to emitter saturation VCE(sat) voltage Input capacitance Switching time Cies tr t on tf t off
Main Characteristics
Power vs. Temperature Derating 200
Pch (W) (A)
Maximum Safe Operation Area 1000 300 100 30 10 3 1 0.3 0.1 0.03
I Collector Current
10 m
µs
Channel Dissipation s
= ion at er Op
10 s m
50 s (1 ho t)
) °C 25
50 100 Case Temperature
150 200 Tc (°C)
Ta = 25 °C 0.01 0.1 0.3 1 3 10 30 100 300 1000 Collector to Emitter Voltage VCE (V) c (T =
Reverse Bias SOA...
