2SK3082S Datasheet | Hitachi Semiconductor

Features - Low on-resistance RDS(on) = 0.055 Ω typ. - High speed switching - 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 1. Gate 2. Drain 3. Source 4. Drain 2SK3082(L),2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 10 40 10 Unit V V A A A A m J W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 10 8.5 30 150 - 55 to +150 Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 - - 1.5 - - 5 - - - - - - - - - Typ - - - - - 0.055 0.090 8 350 190 70 10 55 60 70 0.9 50 Max - - ±10 10 2.5 0.075 0.150 - -...