3SK233
3SK233 is Silicon N-Channel Dual Gate MOS FET manufactured by Hitachi Semiconductor.
Feature
- Low voltage operation.
- Superior cross modulation characteristics.
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
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- -
- -
- -
- -
- -
- -
- -
- -
- -
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- Drain to source voltage VDS 12
- -
- -
- -
- -
- -
- -
- -
- -
- -
- -
- -
- Gate 1 to source voltage VG1S ±10
- -
- -
- -
- -
- -
- -
- -
- -
-...
