3SK239A Datasheet | Hitachi Semiconductor

Features - Excellent low noise characteristics (NF = 1.3 d B Typ at f = 900 MHz) - Capable of low voltage operation Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 - 6 - 6 50 100 125 - 55 to +125 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min - - 6 - 6 - - 14 - - 20 - - - 17 - Typ - - - - - 19 - 1.2 - 1.2 31 0.58 0.36 0.028 19 1.3 Max 50 - - - 5 - 5 28 - 1.6 - 1.6 - 1.0 0.6 0.05 - 2.0 Unit µA V V µA µA m A V V m S p F p F p F d B d B VDS = 5 V, VG2S = 1 V, I D = 10 m A, f = 900 MHz Test conditions VDS = 12 V, VG1S = - 3 V, VG2S = 0 I G1 = - 10 µA, VG2S = VDS = 0 I G2 = - 10 µA, VG1S = VDS = 0 VG1S = - 5 V, VG2S = VDS = 0 VG2S = - 5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = VG2S = 0 VDS = 5 V, VG2S = 0, I D = 100 µA VDS = 5 V, VG1S = 0, I D = 100 µA VDS = 5 V, VG2S = 1 V, I D = 10 m A, f = 1 k Hz VDS = 5 V, VG1S = VG2S = - 3 V, f = 1 MHz Drain to source leakage current I DSX Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 leakage current Gate 2 leakage current Drain current V(BR)G1SS V(BR)G2SS I G1SS I G2SS I DSS Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “XR- ”. |yfs| Ciss Coss Crss PG NF When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of...