4AM15 Datasheet | Hitachi Semiconductor

Features - Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.9 Ω, VGS = - 10 V, ID = - 2 A - - - - Low drive current High speed switching High density mounting Suitable for H-bridged motor driver Outline .Data Sheet.in Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)- 1 IDR Nch 200 ±20 4 16 4 Pch - 200 ±20 - 4 - 16 - 4 Unit V V A A A W W °C °C Pch (Tc = 25°C)- 2 32 Pch- 2 4.0 150 - 55 to +150 Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Device Operation Tch Tstg .Data Sheet.in Electrical Characteristics (Ta = 25°C) N Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min Typ - - - - - 0.33 3.0 Max - - ±10 250 4.0 0.5 - Unit V V µA µA V Ω S Test conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 160 V, VGS = 0 ID = 1 m A, VDS = 10 V ID = 2 A, VGS = 10 V- 1 ID = 2 A VDS = 10 V- 1 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Ciss Coss Crss td(on) tr td(off) tf VDF trr - - - - - - - - - 750 260 40 19 26 45 24 1.0 125 - - - - - - - - - p F p F p F ns ns ns ns V ns IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, di F/dt = 100 A/µs VDS = 10 V VGS = 0 f = 1 MHz ID = 2 A VGS = 10 V RL = 15 Ω V(BR)DS 200 S V(BR)GS ±20 S IGSS - - Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer...