4AM16 Datasheet | Hitachi Semiconductor

Features - Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = - 10 V, I D = - 4 A - High speed switching - High density mounting - Suitable for H-brided motor driver Outline .Data Sheet.in Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse)- I DR Pch (Tc = 25°C)- Pch- Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Device Operation Tch Tstg 2 2 1 Nch 60 ±20 8 32 8 28 4.0 150 Pch - 60 ±20 - 8 - 32 - 8 Unit V V A A A W W °C °C - 55 to +150 .Data Sheet.in Electrical Characteristics (Ta = 25°C) N channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 - - 1.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.5 - - - - - - - - - Typ - - - - - 0.13 0.18 5.5 400 220 60 5 45 150 85 1.2 120 Max - - ±10 - 250 2.0 0.17 0.24 - - - - - - - -...