4AM17
4AM17 is Silicon N/P-Channel/P-Channel Power MOS FET Array manufactured by Hitachi Semiconductor.
Features
- Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS =
- 10 V, ID =
- 4 A
- 4 V gate drive devices.
- High density mounting
Outline
SP-12
12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D
910 1112
S 3
S 6
S 7
S 10
1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
.Data Sheet.in
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices operation VDSS VGSS ID I D(pulse) I DR Pch (Tc = 25°C) Pch Tch Tstg
Note2 Note2 Note1
Unit Pch
- 60 ±20
- 8
- 32
- 8 28 4.0 150 V V A A A W W °C °C
60 ±20 8 32 8
- 55 to +150
.Data Sheet.in
Electrical Characteristics (Ta = 25°C)
( N Channel ) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg t d(on) tr t d(off) tf VDF t rr Min 60 ±20
- - 1.0
- - 3.5
- -
- -
- -
- -
- -...
