HAF2002 Datasheet | Hitachi Semiconductor

Features This FET has the over temperature shut- down capability sensing to the junction temperature. This FET has the built- in over temperature shut- down circuit in the gate area. And this circuit operation to shut- down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. - Logic level operation (4 to 6 V Gate drive) - High endurance capability against to the short circuit - Built- in the over temperature shut- down circuit - Latch type shut- down operation (Need 0 voltage recovery) Outline TO- 220FM Gate resistor Tempe- rature Sencing Circuit Latch Circuit Gate Shut- down Circuit 1 2 S 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 60 16 - 2.8 20 40 20 30 150 - 55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd VOP Min 3.5 - - - - - - - 3.5 Typ - - - - - 0.8 0.35 175 - Max - 1.2 100 50 1 - - - 13 Unit V V µA µA µA m A m A °C V Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions Electrical Characteristics (Ta = 25°C) Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol I D1 I D2 V(BR)DSS V(BR)GSS V(BR)GSS I GSS1 I GSS2 I GSS3 I GSS4 Input current (shut down) I GS(op)1 I GS(op)2 Zero gate voltege drain current Gate to source cutoff voltage...