HB56D436BR Datasheet | Hitachi Semiconductor

Description The HB56D836BR/SBR is a 8M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package. The HB56D436BR/SBR is a 4M × 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package. An outline of the HB56D836BR/SBR, HB56D436BR/SBR is 72-pin single in-line package. Therefore, the HB56D836BR/SBR, HB56D436BR/SBR make high density mounting possible without surface mount technology. The HB56D836BR/SBR, HB56D436BR/SBR provide mon data inputs and outputs. Decoupling capacitors are mounted on the module board. Features - 72-pin single in-line package  Outline: 107.95 mm (Length) × 31.75/25.40 mm (Height) × 9.14 mm (Thickness)  Lead pitch: 1.27 mm - Single 5 V (±5%) supply - High speed  Access time: t RAC = 60/70ns (max) - Low power dissipation  Active mode: 6.41/5.78 W (max) (HB56D836BR/SBR Series) 6.09/5.46 W (max) (HB56D436BR/SBR Series)  Standby mode (TTL): 252 m W (max) (HB56D836BR/SBR Series) (TTL): 126 m W (max) (HB56D436BR/SBR Series) (CMOS): 16.8 m W (max) (L-version) (HB56D836BR/SBR Series) (CMOS): 8.4 m W (max) (L-version) (HB56D436BR/SBR Series) - Fast page mode capability - Refresh period  2048 refresh cycles: 32 ms 128 ms (L-version) Datasheet Title - 3 variations of refresh  RAS-only refresh  CAS-before-RAS refresh  Hidden refresh - TTL patible Ordering Information Type No. HB56D836BR-6 HB56D836BR-7 HB56D836BR-6L HB56D836BR-7L HB56D436BR-6 HB56D436BR-7 HB56D436BR-6L HB56D436BR-7L HB56D836SBR-6 HB56D836SBR-7 HB56D836SBR-6L HB56D836SBR-7L HB56D436SBR-6 HB56D436SBR-7 HB56D436SBR-6L HB56D436SBR-7L Access time 60 ns 70 ns 60 ns 70 ns 60 ns 70 ns 60 ns 70 ns 60 ns 70 ns 60 ns 70 ns 60 ns 70 ns 60 ns 70 ns Package 72-pin SIP socket type 72-pin SIP socket type Pin Arrangement Contact pad...