HL6314MG
HL6314MG is AlGaInP Laser Diode manufactured by Hitachi Semiconductor.
Description
The HL6314MG is a 0.63 µm band Al Ga In P laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser poiters and optical equipment for amusement.
Application
- Laser pointer
Features
- -
- - Visible light output: 635nm Typ (nearly equal to He-Ne gas laser) Optical output power: 3 m W CW Low operating current: 30 m A Typ Low operating voltage: 2.7 V Max
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Absolute Maximum Ratings (TC = 25°C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 3 5- 2 30
- 10 to +50
- 40 to +85
Unit m W m W V V °C °C
1. Pulse condition: Pulse width ≤1µs, duty ≤50%
Optical and Electrical Characteristics (TC = 25°C)
Item Optical output power Threshold current Operating current Operating voltage Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Symbol PO Ith Iop Vop λp θ// θ⊥ Is Min 3
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- 630 6 23 0.08 Typ
- 25 30
- 635 8 30 0.15 Max
- 35 42 2.7 640 10 39 0.4 Unit m W m A m A V nm deg. deg. m A PO = 3 m W PO = 3 m W PO = 3 m W PO = 3 m W PO = 3 m W PO = 3 m W, VR(PD) = 5 V Test Conditions Kink free
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Typical Characteristic Curves
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Typical Characteristic Curves (cont)
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Typical Characteristic Curves (cont)
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Polarization direction
The polarization direction is TM mode. The polarization of 0.63 µm LD’s is different from that of 0.83/0.78/0.67 µm LD’s. The polarization direction of 0.63 µm LD’s is illustrated in the figure...