HN29W12811 Datasheet | Hitachi Semiconductor

Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external mands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all sector address). Features - On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V - Organization  AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)  Data register: (2048 + 64) bytes - Multi-level memory cell  2 bit/per memory cell - Automatic programming  Sector program time: 2.5 ms (typ)  System bus free  Address, data latch function  Internal automatic program verify function  Status data polling function - Automatic erase  Single sector erase time: 1.0 ms (typ)  System bus free  Internal automatic erase verify function  Status data polling function HN29W12811 Series - Erase mode  Single sector erase ((2048 + 64) byte unit) - Fast serial read access time:  First access time: 50 µs (max)  Serial access time: 60 ns (max) - Low power dissipation:  ICC2 = 40 m A (max) (Read)  ISB2 = 50 µA (max) (Standby)  ICC3/ICC4 = 40 m A (max) (Erase/Program)  ISB3 = 5 µA (max) (Deep standby) - The following architecture is required for data reliability.  Error correction: more than 1-bit error correction per each sector read  Spare sectors: 1.8% (145 sectors) within usable sectors Ordering Information Type No. HN29W12811T-60 Available sector More than 8,029 sectors Package 12.0 × 18.40 mm 2 0.5 mm pitch 48-pin plastic TSOP I (TFP-48DA) HN29W12811 Series Pin Arrangement 48-pin TSOP VCC VSS VSS VSS VSS RES RDY/Busy SC OE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 CDE WE CE VSS VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 (Top view) 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27...