HN58V65A Datasheet | Hitachi Semiconductor

Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features - Single supply: 2.7 to 5.5 V - Access time:  100 ns (max) at 2.7 V ≤ VCC < 4.5 V  70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V - Power dissipation:  Active: 20 m W/MHz (typ)  Standby: 110 µW (max) - On-chip latches: address, data, CE, OE, WE - Automatic byte write: 10 ms (max) - Automatic page write (64 bytes): 10 ms (max) - Ready/Busy - Data polling and Toggle bit - Data protection circuit on power on/off - Conforms to JEDEC byte-wide standard - Reliable CMOS with MNOS cell technology HN58V65A Series, HN58V66A Series Features (cont) - - - - - 105 erase/write cycles (in page mode) 10 years data retention Software data protection Write protection by RES pin (only the HN58V66A series) Industrial versions (Temperatur range: - 20 to 85˚C and - 40 to 85˚C) are also available. Ordering Information Access time Type No. HN58V65AP-10 HN58V66AP-10 HN58V65AFP-10 HN58V66AFP-10 HN58V65AT-10 HN58V66AT-10 2.7 V ≤ VCC < 4.5 V 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 4.5 V ≤ VCC ≤ 5.5 V 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 28-pin plastic TSOP(TFP-28DB) 400 mil 28-pin plastic SOP (FP-28D) Package 600 mil 28-pin plastic DIP (DP-28) Pin Arrangement HN58V65AP Series HN58V65AFP Series RDY/Busy A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 RDY/Busy A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS HN58V66AP Series HN58V66AFP Series 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE RES A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 (Top...