PF01411A Datasheet | Hitachi Semiconductor

Features - - - - High gain 3stage amplifier : 0 d Bm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 d B Typ Pin Arrangement - RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 10 - 30 to +100 - 30 to +100 5 Unit V A V m W °C °C W Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 880 0.5 - 40 - - - 3.8 Typ - - - 45 - 45 - 45 1.5 4.3 Max 915 3.0 100 - - 35 - 35 3 - Unit MHz V µA % d Bc d Bc - W Pin = 1 m W, VDD = 4.8 V, VAPC = 3.0 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 m W, VDD = 4.3 V, VAPC = 3.0 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 1 m W, VDD = 4.8 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 m W, VDD = 4.8 V, Pout = 3.8 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 m W, VDD = 4 to 7 V, Pout ≤ 3.8 W, Vapc ≤ 3 V GSM pulse. Rg = 50 Ω, t = 20sec., Tc = 25°C, Output VSWR = 6 : 1 All phases VDD = 10 V, VAPC = 0 V Pin = 1 m W, VDD = 4.8 V, Pout = 3.8 W, Vapc = controlled RL = Rg = 50 Ω, Tc = 25°C Test Condition Output power (2) Pout (2) - W Isolation - - - 50 - 40 d Bm Switching time tr, tf - 1 µs Stability & Load VSWR tolerance - No parasitic oscillation & No degradation -...