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HY57V281620FLTP

HY57V281620FLTP is Synchronous DRAM Memory 128Mbit (8Mx16bit) manufactured by SK Hynix.
HY57V281620FLTP datasheet preview

HY57V281620FLTP Datasheet

Part number HY57V281620FLTP
Download HY57V281620FLTP Datasheet PDF
File Size 773.35 KB
Manufacturer SK Hynix
Description Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620FLTP page 2 HY57V281620FLTP page 3

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SK Hynix datasheets

HY57V281620FLTP Description

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V281620FLTP Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead Free Package
  • Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms
  • mercial Temperature (0oC to 70oC)
  • Industrial Temperature (-40oC to 85oC) Operating Temperature
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or full page for Sequential Burst
  • 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation
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