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HY57V281620FTP Datasheet

Manufacturer: SK Hynix
HY57V281620FTP datasheet preview

Datasheet Details

Part number HY57V281620FTP
Datasheet HY57V281620FTP_HynixSemiconductor.pdf
File Size 773.35 KB
Manufacturer SK Hynix
Description Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620FTP page 2 HY57V281620FTP page 3

HY57V281620FTP Overview

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V281620FTP Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead Free Package
  • Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms
  • mercial Temperature (0oC to 70oC)
  • Industrial Temperature (-40oC to 85oC) Operating Temperature
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or full page for Sequential Burst
  • 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency; 2, 3 Clocks Burst Read Single Write operation
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HY57V281620ELT Synchronous DRAM Memory
HY57V281620ELTP Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620EST Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ET Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ETP Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620HCT (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM
HY57V281620HLT (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

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