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HY57V281620FTP - Synchronous DRAM Memory 128Mbit (8Mx16bit)

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
  • Internal four banks operation Auto refresh and self refresh 4096 Refresh cycles / 64ms - Commercial Temperature (0oC to 70oC) - Industrial Temperature (-40oC to 85oC) Operating Temperature.

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Datasheet Details

Part number HY57V281620FTP
Manufacturer SK Hynix
File Size 773.35 KB
Description Synchronous DRAM Memory 128Mbit (8Mx16bit)
Datasheet download datasheet HY57V281620FTP Datasheet

Full PDF Text Transcription for HY57V281620FTP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY57V281620FTP. For precise diagrams, and layout, please refer to the original PDF.

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 1.1 Initial Draft Final Versi...

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AM Revision History Revision No. 0.1 1.0 1.1 Initial Draft Final Version Correct Typo Error Page10, Page12 Correct Typo Error Page 10 : The Note for the Parameter “tOH” ( 2 -> Blank ) History Draft Date Jan. 2007 Apr. 2007 July. 2007 Remark Preliminary 1.2 Oct. 2007 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2 / Oct.

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