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HY57V561620BT-I - 4 Banks x 4M x 16Bit Synchronous DRAM

General Description

The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V561620B is organized as 4banks of 4,194,304x16.

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HY57V561620B(L)T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B-I is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.